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Bipolar Junction Transistor (N-P-N And P-N-P Transistor) MCQ - Practice Questions with Answers

Edited By admin | Updated on Sep 25, 2023 25:23 PM | #NEET

Quick Facts

  • Junction Transistor is considered one the most difficult concept.

  • 17 Questions around this concept.

Solve by difficulty

A working transistor with its three legs marked Pand R  is tested using a multimeter. No conduction is found between P and Q . By connecting the common (negative) terminal of the multimeter to R and the other (positive) terminal to P or Q some resistance is seen on the multimeter. Which of the following is true for the transistor?

In a common emitter amplifier circuit using an n-p-n transistor, the phase difference between the input and the output voltages will be :

In a common base amplifier, the phase difference between the input signal voltage and output voltage is :

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Junction Transistor

Bipolar Junction Transistor (BJT)-

it is a three-terminal electronic device that amplifies the flow of current. It has three doped regions ( emitter, base, and collector) forming two p-n junctions between them. 

Based on their construction, Bipolar junction transistors are classified into two types as 

1) n-p-n transistor

  2)  p-n-p transistor-

All three segments (emitter, base, and collector) of a transistor have different thickness and their doping levels are also different.

The schematic symbols of both these transistors are given in the below figure.

In the schematic symbols, as shown in the above figure, the arrowhead shows the direction of conventional current in the transistor.

The three segments of a transistor-

  • Emitter- This segment is on one side of the transistor. It is of moderate size and heavily doped causing it to supply a large number of carriers for the flow of current.
  • Base: This is the central segment. It is very thin and lightly doped.
  • Collector: This segment collects a major portion of the majority carriers supplied by the emitter. The collector side is moderately doped and larger in size as compared to the emitter.

 

 

       

 

 

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